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Número de pieza(s) : BAS21T
Secos Corporation.
componentes Descripción : 0.4A , 250V Plastic-Encapsulated Diode
Número de pieza(s) : GS88237BB-250V GS88237BB-200V GS88237BB-250IV GS88237BB-200IV GS88237BD-250V GS88237BD-200V GS88237BD-250IV GS88237BD-200IV GS88237BGB-250V GS88237BGB-200V
Giga Semiconductor
componentes Descripción : 256K x 36 9Mb SCD/DCD Sync Burst SRAM
Número de pieza(s) : GS880Z18BGT-150V GS880Z18BGT-200V GS880Z18BGT-250V GS880Z18BT-150IV GS880Z18BT-150V GS880Z18BT-200IV GS880Z18BT-200V GS880Z18BT-250IV GS880Z18BT-250V GS880Z32BGT-150V
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS88118B-XXXV GS88118BD-150IV GS88118BD-150V GS88118BD-200IV GS88118BD-200V GS88118BD-250IV GS88118BD-250V GS88118BD-XXXV GS88118BGD-150IV GS88118BGD-150V
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : GS816273CC-250IV GS816273CC-250V GS816273CGC-250IV GS816273CGC-250V GS816273CC-250VT GS816273CC-250IVT GS816273CGC-250VT GS816273CGC-250IVT
Giga Semiconductor
componentes Descripción : 256K x 72 18Mb S/DCD Sync Burst SRAMs
Número de pieza(s) : GS88037BT-XXXV GS88037BT-250V GS88037BT-200V GS88037BT-250IV GS88037BT-200IV GS88037BGT-250V GS88037BGT-200V GS88037BGT-250IV GS88037BGT-200IV
Giga Semiconductor
componentes Descripción : 256K x 36 9Mb Sync Burst SRAM
Número de pieza(s) : GS816218BB-150IV GS816218BB-150V GS816218BB-200IV GS816218BB-200V GS816218BB-250IV GS816218BB-250V GS816218BGB-150IV GS816218BGB-150V GS816218BGB-200IV GS816218BGB-200V
Giga Semiconductor
componentes Descripción : 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
Número de pieza(s) : GS881Z18BD-150IV GS881Z18BD-150V GS881Z18BD-200IV GS881Z18BD-200V GS881Z18BD-250IV GS881Z18BD-250V GS881Z18BGD-150V GS881Z18BGD-200V GS881Z18BGD-250V GS881Z18BGT-150IV
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS88218BB-150IV GS88218BB-150V GS88218BB-200IV GS88218BB-200V GS88218BB-250IV GS88218BB-250V GS88218BB-V GS88218BD-150IV GS88218BD-150V GS88218BD-200IV
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
Número de pieza(s) : GS880E18BGT-150V GS880E18BGT-200IV GS880E18BGT-200V GS880E18BGT-250IV GS880E18BGT-250V GS880E18BT-150IV GS880E18BT-150V GS880E18BT-200IV GS880E18BT-200V GS880E18BT-250IV
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : GS82564Z18GB-333V GS82564Z18GB-250V GS82564Z18GB-200V GS82564Z36GB-333V GS82564Z36GB-250V GS82564Z36GB-200V GS82564Z18GB-333IV GS1284218GB-250IV GS82564Z18GB-200IV GS82564Z36GB-333IV
Giga Semiconductor
componentes Descripción : 288Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS816018BGT-150IV GS816018BGT-150V GS816018BGT-200IV GS816018BGT-200V GS816018BGT-250IV GS816018BGT-250V GS816018BT-150IV GS816018BT-150V GS816018BT-200IV GS816018BT-200V
Giga Semiconductor
componentes Descripción : 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Número de pieza(s) : GS881E18BD-150IV GS881E18BD-150V GS881E18BD-200IV GS881E18BD-200V GS881E18BD-250IV GS881E18BD-250V GS881E18BGD-150IV GS881E18BGD-150V GS881E18BGD-200IV GS881E18BGD-200V
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : GS882Z18BGD-150IV GS882Z18BGD-150V GS882Z18BGD-200IV GS882Z18BGD-250IV GS882Z36BB-200V GS882Z36BGD-150IV GS882Z36BGD-150V GS882Z36BGD-200IV GS882Z36BGD-200V GS882Z36BGD-250IV
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS816272CC-V GS816272CC-XXXV GS816272CC-250V GS816272CC-200V GS816272CC-150V GS816272CC-250IV GS816272CC-200IV GS816272CC-150IV GS816272CGC-250V GS816272CGC-200V
Giga Semiconductor
componentes Descripción : 256K x 72 18Mb S/DCD Sync Burst SRAMs
Número de pieza(s) : DBB04
SANYO -> Panasonic
componentes Descripción : 0.4A Single-Phase Bridge Rectifier Diffused Junction Silicon Diode
Número de pieza(s) : BAV21 BAV20 BAV19 BAV19R0G BAV19A0G BAV20R0G BAV20A0G BAV21R0G BAV21A0G
TSC Corporation
componentes Descripción : 200mA,120-250V Switching Diode (Rev - V_E1610)
Número de pieza(s) : BAS21H
Willas Electronic Corp.
componentes Descripción : 200mA Surface Mount Switching Diode-250V
Número de pieza(s) : GS8161E18BD-150IV GS8161E18BD-150V GS8161E18BD-200IV GS8161E18BD-200V GS8161E18BD-250IV GS8161E18BD-250V GS8161E18BGD-150IV GS8161E18BGD-150V GS8161E18BGD-200IV GS8161E18BGD-200V
Giga Semiconductor
componentes Descripción : 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
Número de pieza(s) : D120SC3M_ D120SC4M_ D180SC3M_ D180SC4M_ D1K20_ D1K20H_ D1K40_ D1R100_ D1R150_ D1R20_
Shindengen
componentes Descripción : Rectifier Diodes / SRK12ZB Vrm = 7kV Io = 0.4A
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